Exciton-induced lattice defect formation
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Exciton-induced lattice defect formation
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| Creator |
Savchenko, E.V.
Ogurtsov, A.N. Zimmerer, G. |
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| Subject |
Electronically Induced Phenomena: Low Temperature Aspects
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| Description |
The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in the band of atomic type self-trapped exciton luminescence was analyzed. A direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism was obtained for the first time. The model of the permanent lattice defect formation is discussed.
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| Date |
2018-01-14T09:17:33Z
2018-01-14T09:17:33Z 2003 |
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| Type |
Article
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| Identifier |
Exciton-induced lattice defect formation / E.V. Savchenko, A.N. Ogurtsov, G. Zimmerer // Физика низких температур. — 2003. — Т. 29, № 3. — С. 356-360. — Бібліогр.: 26 назв. — англ.
0132-6414 PACS: 61.82.Ms, 71.35.-y, 78.55.Hx http://dspace.nbuv.gov.ua/handle/123456789/128823 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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