Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance
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| Creator |
Naidyuk, Yu.G.
Gloos, K. Takabatake, T. |
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| Subject |
Электpонные свойства металлов и сплавов
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| Description |
The rare-earth Kondo semiconductor CeNiSn is investigated by point-contact and tunneling spectroscopy using mechanically controllable break junctions. I(V) characteristics and their derivatives are recorded for contacts from the metallic to the tunneling regime at temperatures between 0.1–8 K and in magnetic fields up to 8 T. It is found that CeNiSn behaves like a compound with typical metallic properties instead of exhibiting the expected semiconducting behavior. The main spectral feature is a pronounced zero-bias conductance minimum of about 10 meV width, which appears to be of magnetic nature. These break-junction experiments provide no clear-cut evidence for an energy (pseudo) gap in CeNiSn.
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| Date |
2018-01-16T13:25:11Z
2018-01-16T13:25:11Z 2000 |
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| Type |
Article
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| Identifier |
Break-junction experiments on the Kondo semiconductor CeNiSn: tunnelling versus direct conductance / Yu.G. Naidyuk, K. Gloos, T. Takabatake // Физика низких температур. — 2000. — Т. 26, № 7. — С. 687-693. — Бібліогр.: 14 назв. — англ.
0132-6414 PACS: 71.27.+a, 73.40.Jn, 75.30.Mb http://dspace.nbuv.gov.ua/handle/123456789/129106 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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