The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system
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| Creator |
Ahmed, A.M.
Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. |
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| Subject |
Низкотемпеpатуpный магнетизм
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| Description |
This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite.
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| Date |
2018-01-18T17:37:23Z
2018-01-18T17:37:23Z 2016 |
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| Type |
Article
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| Identifier |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ.
0132-6414 PACS: 75.47.Lx, PACS: 75.47.Gk, 72.80.Tm http://dspace.nbuv.gov.ua/handle/123456789/129293 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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