Запис Детальніше

Electron accumulation layer in ultrastrong magnetic field

Vernadsky National Library of Ukraine

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Поле Співвідношення
 
Title Electron accumulation layer in ultrastrong magnetic field
 
Creator Sammon, M.
Han Fu
Shklovskii, B.I.
 
Subject К 100-летию со дня рождения И.М. Лифшица
 
Description When a three-dimensional electron gas is subjected to a very strong magnetic field, it can reach a quasi-onedimensional
state in which all electrons occupy the lowest Landau level. This state is referred to as the extreme
quantum limit (EQL) and has been studied in the physics of pulsars and bulk semiconductors. Here we present
a theory of the EQL phase in electron accumulation layers created by an external electric field E at the surface
of a semiconductor with a large Bohr radius such as InSb, PbTe, SrTiO₃ (STO), and particularly
in the LaAlO₃/SrTiO₃ (LAO/STO) heterostructure. The phase diagram of the electron gas in the plane of the
magnetic field strength and the electron surface concentration is found for different orientations of the magnetic
field. We find that in addition to the quasi-classical metallic phase (M), there is a metallic EQL phase, as well
as an insulating Wigner crystal state (WC). Within the EQL phase, the Thomas–Fermi approximation is used
to find the electron density and the electrostatic potential profiles of the accumulation layer. Additionally,
the quantum capacitance for each phase is calculated as a tool for experimental study of these phase diagrams.
 
Date 2018-01-19T14:20:44Z
2018-01-19T14:20:44Z
2017
 
Type Article
 
Identifier Electron accumulation layer in ultrastrong magnetic field / M. Sammon, Han Fu, B.I. Shklovskii // Физика низких температур. — 2017. — Т. 43, № 2. — С. 283-290. — Бібліогр.: 39 назв. — англ.
0132-6414
PACS: 71.10.−w, 73.20.Qt, 75.70.−i
http://dspace.nbuv.gov.ua/handle/123456789/129372
 
Language en
 
Relation Физика низких температур
 
Publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України