On the nature of ionic liquid gating of Nd₂CuO₄ thin films
Vernadsky National Library of Ukraine
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Title |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films
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Creator |
Atesci, Hasan
Coneri, Francesco Leeuwenhoek, Maarten Hilgenkamp, Hans Jan M. van Ruitenbeek |
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Subject |
К 100-летию со дня рождения И.М. Лифшица
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Description |
Recently, ionic liquid gating has been used to modulate the charge carrier properties of metal oxides. The mechanism behind it, however, is still a matter of debate. In this paper, we report experiments on doped and undoped Nd₂CuO₄. We find major resistance drops of the bilayer coupled to observations of the presence of a considerable Faradeic component in the gate current and of the appearance of charge transfer peaks in the cyclic voltammetry data. This leads us to propose a mechanism of gating based on irreversible electrochemical reactions, likely due to trace amounts of contaminations present in the ionic liquid. This work is therefore in line with previous reports confirming the presence of irreversible electrochemistry in ionic liquid gated electron- doped cuprates.
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Date |
2018-01-19T14:27:02Z
2018-01-19T14:27:02Z 2017 |
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Type |
Article
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Identifier |
On the nature of ionic liquid gating of Nd₂CuO₄ thin films / Hasan Atesci, Francesco Coneri, Maarten Leeuwenhoek, Hans Hilgenkamp, Jan M. van Ruitenbeek // Физика низких температур. — 2017. — Т. 43, № 2. — С. 353-359. — Бібліогр.: 50 назв. — англ.
0132-6414 PACS: 66.10.–x, 68.15.+e, 82.45.–h http://dspace.nbuv.gov.ua/handle/123456789/129380 |
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Language |
en
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Relation |
Физика низких температур
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Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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