Запис Детальніше

Activation transport under quantum Hall regime in HgTe-based heterostructure

Vernadsky National Library of Ukraine

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Title Activation transport under quantum Hall regime in HgTe-based heterostructure
 
Creator Gudina, S.V.
Neverov, V.N.
Novik, E.G.
Ilchenko, E.V.
Harus, G.I.
Shelushinina, N.G.
Podgornykh, S.M.
Yakunin, M.V.
Mikhailov, N.N.
Dvoretsky, S.A.
 
Subject XXI Уральская международная зимняя школа по физике полупроводников
 
Description We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.
 
Date 2018-01-19T16:41:25Z
2018-01-19T16:41:25Z
2017
 
Type Article
 
Identifier Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.
0132-6414
PACS: 73.63.Hs, 73.43.Qt
http://dspace.nbuv.gov.ua/handle/123456789/129428
 
Language en
 
Relation Физика низких температур
 
Publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України