Intrinsically shunted Josephson junctions for electronics applications
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Intrinsically shunted Josephson junctions for electronics applications
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| Creator |
Belogolovskii, M.
Zhitlukhina, E. Lacquaniti, V. De Leo, N. Fretto, M. Sosso, A. |
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| Subject |
Сверхпроводящие и мезоскопические структуры. К 70-летию со дня рождения А.Н. Омельянчука
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| Description |
Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current -voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities that are so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two super-conducting electrodes, while a small part of the interface is well transparent. We discuss the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K.
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| Date |
2018-01-19T20:43:59Z
2018-01-19T20:43:59Z 2017 |
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| Type |
Article
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| Identifier |
Intrinsically shunted Josephson junctions for electronics applications / M. Belogolovskii, E. Zhitlukhina, V. Lacquaniti, N. De Leo, M. Fretto, A. Sosso // Физика низких температур. — 2017. — Т. 43, № 7. — С. 950-961. — Бібліогр.: 75 назв. — англ.
0132-6414 PACS: 85.25.Cp, 73.23.–b, 68.55.aj http://dspace.nbuv.gov.ua/handle/123456789/129526 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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