Запис Детальніше


Поле	Співвідношення

Title	Investigation of low power schottky diode I-V characteristics

Names	Kashtalian, A.S. Каштальян, А.С.
Date Issued	2014 (iso8601)
Abstract	Abstract. I‐V characteristics of semiconductor ultrahigh frequency diode are considered in articles, such diodes are used for detection of an electromagnetic field and measurement of its density. The equivalent scheme of the ultrahigh frequency semiconductor diode, its parameters and its influence on the I‐V characteristics are examined. Approximation of IV curves of such class particular diodes is performed. Characteristics are divided into separate quadratic and linear zones for this purpose. Possibility of obtaining I‐V curve parameters by means of linear regression is offered.
Genre	Стаття
Topic	microwave diode
Identifier	Kashtalian, A.S. Investigation of low power schottky diode I-V characteristics [Текст] / A. S. Kashtalian // Вісник Хмельницького національного університету. Технічні науки. – 2014. – № 4. – С. 53-56.