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Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3)

Електронний науковий архів Науково-технічної бібліотеки Національного університету "Львівська політехніка"

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Title Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3)
 
Creator Hlad, Roman
Shapoval, Pavlo
Stadnik, Vitalii
Sozanskiy, Martyn
Guminilovych, Ruslana
Yatchyshyn, Yosyp
 
Contributor Lviv Polytechnic National University
 
Subject indium sulfide
chemical deposition
semiconductor films
thin films
structure and morphology of thin films
 
Description The process of synthesis of indium sulphide
(In2S3) semiconductor thin films by a chemical synthesis
method was done. The acetic acid has been used as a
complexing agent. Ivestigations of thin films properties were
carried out by using X-ray powder diffraction, scanning
eletron microscopy, optical spectroscopy. The phase
composition, optical transmission and absorption spectra of
In2S3 films were studied. The value of bang gap energy has
been experimentally determined from spectral dependences of
optical transmission of In2S3 films, and ranges from 2,31 to
2,55 eV.
 
Date 2018-04-12T13:06:09Z
2018-04-12T13:06:09Z
2017-12-23
2017-12-23
 
Type Conference Abstract
 
Identifier Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3) / Roman Hlad, Pavlo Shapoval, Vitalii Stadnik, Martyn Sozanskiy, Ruslana Guminilovych, Yosyp Yatchyshyn // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 54–55. — (6th International academic conference «Chemistry & chemical technology 2017» (CCT-2017)).
978-966-941-108-2
http://ena.lp.edu.ua:8080/handle/ntb/40465
Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3) / Roman Hlad, Pavlo Shapoval, Vitalii Stadnik, Martyn Sozanskiy, Ruslana Guminilovych, Yosyp Yatchyshyn // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 54–55. — (6th International academic conference «Chemistry & chemical technology 2017» (CCT-2017)).
 
Language en
 
Relation Litteris et Artibus : матеріали, 2017
Litteris et Artibus : proceedings, 2017
[1] N. Revathi, “Synthesis and physical behaviour of In2S3 films”, Applied Surface Science, vol. 254,pp. 5291-5298, June 2008.
[2] А. Omelianovych, “Effect of post annealing on the characteristics of In2S3 buffer layer grown by chemical bath deposition on a CIGS substrate”, Current Applied Physics, pp. 1-28, Aug. 2015,doi: 10.1016/j.cap.2015.08.019.
[3] S.M Pawar, “Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films”, Curr. Appl. Phys., vol. 11(2), pp. 117-161,2011.
[4] W. Kraus, G. Nolze, PowderCell for Windows (version 2.4), Berlin, Federal Institute for Materials Research and Testing, March 2000.
[5] Z. Gao, “Investigation on growth of In2S3 thin films by chemical bath deposition”, Materials Science in Semiconductor Processing , vol. 15, pp. 187-193,Mar. 2012.
[6] В. Asenjo, “Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition”, Journal of Physics and Chemistry of Solids, vol. 71, pp.1629-1633, Sept. 2010.
[7] В. Yahmadi, “Structural analysis of indium sulphide thin films elaborated by chemical bath deposition” Thin Solid Films, vol. 473, pp. 201-207, Mar. 2005,doi:10.1016/j.tsf.2004.04.002.
[8] K. Yamaguchi, “Structural and compositional analyses on indium sulfide thin films deposited in aqueous chemical bath containing indium chloride and thiacetamide”, Thin Solid Films, vol. 431-432,pp. 354-358, 2003.
[9] C. Lokhande, “Chemical bath deposition of indium sulphide thin films: preparation and characterization”, Thin Solid Films vol. 340,pp. 18-23, June 1998.
[1] N. Revathi, "Synthesis and physical behaviour of In2S3 films", Applied Surface Science, vol. 254,pp. 5291-5298, June 2008.
[2] A. Omelianovych, "Effect of post annealing on the characteristics of In2S3 buffer layer grown by chemical bath deposition on a CIGS substrate", Current Applied Physics, pp. 1-28, Aug. 2015,doi: 10.1016/j.cap.2015.08.019.
[3] S.M Pawar, "Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films", Curr. Appl. Phys., vol. 11(2), pp. 117-161,2011.
[4] W. Kraus, G. Nolze, PowderCell for Windows (version 2.4), Berlin, Federal Institute for Materials Research and Testing, March 2000.
[5] Z. Gao, "Investigation on growth of In2S3 thin films by chemical bath deposition", Materials Science in Semiconductor Processing , vol. 15, pp. 187-193,Mar. 2012.
[6] V. Asenjo, "Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition", Journal of Physics and Chemistry of Solids, vol. 71, pp.1629-1633, Sept. 2010.
[7] V. Yahmadi, "Structural analysis of indium sulphide thin films elaborated by chemical bath deposition" Thin Solid Films, vol. 473, pp. 201-207, Mar. 2005,doi:10.1016/j.tsf.2004.04.002.
[8] K. Yamaguchi, "Structural and compositional analyses on indium sulfide thin films deposited in aqueous chemical bath containing indium chloride and thiacetamide", Thin Solid Films, vol. 431-432,pp. 354-358, 2003.
[9] C. Lokhande, "Chemical bath deposition of indium sulphide thin films: preparation and characterization", Thin Solid Films vol. 340,pp. 18-23, June 1998.
 
Rights © Національний університет “Львівська політехніка”, 2017
 
Format 54-55
2
application/pdf
image/png
 
Coverage 23–25 листопада 2017 року
23–25 November, 2017
Львів
Lviv
 
Publisher Видавництво Львівської політехніки
Lviv Polytechnic Publishing House