Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
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| Creator |
Dan`ko, A.Ya.
Nizhankovsky, S.V. Kanischev, V.N. Sidelnikova, N.S. Adonkin, G.T. Puzikov, V.M. Grin, L.A. |
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| Description |
The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications.
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| Date |
2018-06-12T17:06:34Z
2018-06-12T17:06:34Z 2006 |
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| Type |
Article
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| Identifier |
Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/134176 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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