Investigation of scintillation characteristics for CsI:TI and Nal:TI crystals under different surface treatment conditions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigation of scintillation characteristics for CsI:TI and Nal:TI crystals under different surface treatment conditions
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| Creator |
Andryushchenko, L.A.
Boyarintsev, A.Yu. Grinyov, B.V. Kilimchuk, I.V. Kudin, A.M. Tarasov, V.A. Vyday, Yu.T. |
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| Description |
The influence of mechanical and chemical methods of CsI:TI and Nal:TI crystals surface treatment on their scintillation characteristics at registration of short-range ionizing radiation has been investigated. It is shown that application of ultrathin silicon dioxide powder obtained by sol-gel method and organosilicon liquids at the polishing stage provides the near-surface layer of CsI:TI and NaI:TI crystals with minimum light yield nonuniformity. After grinding of the crystal surface, the stability of scintillation characteristics can be achieved by the surface treatment with tetraethoxy silane and oligo-(siloxane hydride) liquid. Application of thin-film organosilicon coating on the CsI:TI crystal surface turned to the radiation source has improved the pulse-height resolution by 3-5 % in the absolute value at registration of X-ray radiation with E = 5.9 keV.
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| Date |
2018-06-14T13:25:17Z
2018-06-14T13:25:17Z 2006 |
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| Type |
Article
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| Identifier |
Investigation of scintillation characteristics for CsI:TI and Nal:TI crystals under different surface treatment conditions / L.A. Andryushchenko, A.Yu. Boyarintsev, B.V. Grinyov, I.V. Kilimchuk, A.M. Kudin, V.A. Tarasov, Yu.T. Vyday // Functional Materials. — 2006. — Т. 13, № 3. — С. 534-537. — Бібліогр.: 10 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135015 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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