Temperature dependences and isotherms of galoanomagnetic properties of Bi doped PbTe crystals and thin films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Temperature dependences and isotherms of galoanomagnetic properties of Bi doped PbTe crystals and thin films
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| Creator |
Rogacheva, E.I.
Lyubchenko, S.G. Vodorez, O.S. |
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| Description |
The temperature dependences of galvanomagnetic properties (the Hall coefficient, electrical conductivity, charge carrier mobility) of (PbTe)₁₀₀₋ₓBiₓ (x = 0-1) alloys obtained by doping PbTe with elementary Bi and thin films prepared from these alloys were studied in the temperature range 80-300 K. On the basis of the temperature dependences, the isotherms of the properties were plotted. It was established that a non-monotonic behavior of the dependences of the properties on the Bi concentration, which had been observed earlier at room temperature, is preserved at lower temperatures. This confirms our earlier suggestion about the self-organization processes taking place in the defect subsystem of the crystal at certain Bi concentrations.
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| Date |
2018-06-14T14:45:13Z
2018-06-14T14:45:13Z 2006 |
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| Type |
Article
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| Identifier |
Temperature dependences and isotherms of galoanomagnetic properties of Bi doped PbTe crystals and thin films / E.I. Rogacheva, S.G. Lyubchenko, O.S. Vodorez // Functional Materials. — 2006. — Т. 13, № 4. — С. 571-576. — Бібліогр.: 16 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135055 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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