Luminescence of nanostructures based on semiconductor nitrides
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Luminescence of nanostructures based on semiconductor nitrides
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| Creator |
Menkovich, E.A.
Tarasov, S.A. Lamkin, I.A. |
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| Subject |
Characterization and properties
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| Description |
Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher stability and better work performance. Apparently, the use of superlattices can compensate for the elastic stresses and piezoelectric fields at the heterointerface. This compensation reduces the formation of dislocations in the structures with superlattices, which increases the intensity of radiation and decreases self-heating effects.
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| Date |
2018-06-14T18:46:38Z
2018-06-14T18:46:38Z 2012 |
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| Type |
Article
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| Identifier |
Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135304 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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