The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals
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| Creator |
Pelikhaty, N.M.
Rokhmanov, N.Ya. Onischnko, V.V. |
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| Description |
Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration.
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| Date |
2018-06-14T14:55:55Z
2018-06-14T14:55:55Z 2006 |
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| Type |
Article
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| Identifier |
The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135078 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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