Optical properties of silicon carbide obtained by direct ion deposition
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Optical properties of silicon carbide obtained by direct ion deposition
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| Creator |
Lopin, A.V.
Semenov, A.V. Puzikov, V.M. Trushkovsky, A.G. |
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| Description |
Optical transmission, absorption and reflection spectra of silicon carbide thin films deposited on sapphire substrate from the carbon and silicon ionic flows have been investigated. The films have been obtained at various deposition paramenters, i.e., under variation of ion energy and substrate temperature. The behavior of optical characteristics of silicon-carbide films depending on influence of changes in technological parameters. It has been shown that direct ion deposition method provides a control of film optical parameters within a wide range.
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| Date |
2018-06-14T14:50:25Z
2018-06-14T14:50:25Z 2006 |
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| Type |
Article
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| Identifier |
Optical properties of silicon carbide obtained by direct ion deposition / A.V. Lopin, A.V. Semenov, V.M. Puzikov, A.G. Trushkovsky // Functional Materials. — 2006. — Т. 13, № 4. — С. 631-636. — Бібліогр.: 9 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135067 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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