Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices
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| Creator |
Fogel, N.Ya.
Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. |
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| Subject |
Электpонные свойства металлов и сплавов
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| Description |
A new type of quantum size effect in metal-semiconductor superlattices is predicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place. This effect is due to the fact that the probability of metal electron tunneling through a semiconductor layer depends sharply on the electron incidence angle. The oscillations have been found to exist even in disordered systems, provided the electrons in metal layers undergo low-angle scattering on imperfections.
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| Date |
2018-06-14T07:17:23Z
2018-06-14T07:17:23Z 1999 |
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| Type |
Article
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| Identifier |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices / N.Ya. Fogel, R.I. Shekhter, A.A. Slutskin, H.A. Kovtun // Физика низких температур. — 1999. — Т. 25, № 2. — С. 168-171. — Бібліогр.: 8 назв. — англ.
0132-6414 http://dspace.nbuv.gov.ua/handle/123456789/134704 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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