HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
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| Creator |
Bekirov, B.
Ivanchenko, I. Popenko, N. Tkach, V. |
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| Subject |
Characterization and properties
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| Description |
By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current.
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| Date |
2018-06-14T19:01:01Z
2018-06-14T19:01:01Z 2012 |
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| Type |
Article
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| Identifier |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135327 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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