Strain induced effects in p-type silicon whiskers at low temperatures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Strain induced effects in p-type silicon whiskers at low temperatures
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| Creator |
Druzhinin, A.A.
Maryamova, I.I. Kutrakov, O.P. Liakh-Kaguy, N.S. Palewski, T. |
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| Subject |
Characterization and properties
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| Description |
Complex studies of strain induced effects in boron doped p-type silicon whiskers with [111] crystallographic direction in the wide temperature range 4.2 - 300 K at magnetic fields up to 14 T and under high-energy electron irradiation were carried out. The peculiarities of piezomagnetoresistance of Si whiskers heavily boron doped and with boron concentration in the vicinity of metal-insulator transition were determined. The influence of electron irradiation with energy 10 MeV and fluence Φ = 5*10¹⁷ el/cm ² on the gauge factor of boron doped Si whiskers at low temperatures have been also studied. High-sensitive piezoresistive sensor to measure pressure of liquid helium on the basis of silicon whiskers with a giant gauge factor was developed. Heavily doped Si whiskers with classic piezoresistance have been successfully used in mechanical sensors operating in the wide temperature range 4.2 - 300 K.
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| Date |
2018-06-14T19:01:19Z
2018-06-14T19:01:19Z 2012 |
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| Type |
Article
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| Identifier |
Strain induced effects in p-type silicon whiskers at low temperatures / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov, N.S. Liakh-Kaguy, T. Palewski // Functional Materials. — 2012. — Т. 19, № 3. — С. 325-329. — Бібліогр.: 11 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135328 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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