Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
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| Creator |
Vovk, R.V.
Khadzhai, G.Ya. Nazyrov, Z.F. |
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| Subject |
Characterization and properties
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| Description |
The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure.
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| Date |
2018-06-15T06:11:47Z
2018-06-15T06:11:47Z 2012 |
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| Type |
Article
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| Identifier |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135379 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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