Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon
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| Creator |
Zaitsev, R.V.
Kopach, V.R. Kirichenko, M.V. Doroshenko, A.N. Khrypunov, G.S. |
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| Subject |
Modeling and simulation
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| Date |
2018-06-15T12:37:04Z
2018-06-15T12:37:04Z 2011 |
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| Type |
Article
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| Identifier |
Dependence of minority charge carriers lifetime on point defects type and their concentration in single-crystal silicon / R.V. Zaitsev, V.R. Kopach, M.V. Kirichenko, A.N. Doroshenko, G.S. Khrypunov // Functional Materials. — 2011. — Т. 18, № 4. — С. 497-503. — Бібліогр.: 16 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135592 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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