Photocurrent generation in single electron tunneling transistors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photocurrent generation in single electron tunneling transistors
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| Creator |
Tageman, O.
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| Subject |
Низкоразмерные и неупорядоченные системы
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| Description |
A single-electron tunneling transistor (SET) with a non-equilibrium mode population in one of the leads is analyzed theoretically. We model transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. The non-equilibrium mode population, which is induced by coherent THz-pumping in the channel, produces empty states below the Fermi level for electrons to tunnel into. A photocurrent arises, which is periodically saw-tooth peaked with respect to the voltage on a central gate. For intense THz-fields the peaks display plateaus that reflect the energy dependence of the mode population. We also predict a high-gain Vin/Vout transfer-characteristic, similar to that of a current biased SET.
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| Date |
2018-06-16T08:02:32Z
2018-06-16T08:02:32Z 1999 |
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| Identifier |
Photocurrent generation in single electron tunneling transistors / O. Tageman // Физика низких температур. — 1999. — Т. 25, № 3. — С. 290-297. — Бібліогр.: 26 назв. — англ.
0132-6414 http://dspace.nbuv.gov.ua/handle/123456789/136222 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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