The aggregation of point defetc in dislocation-free silicon single crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
The aggregation of point defetc in dislocation-free silicon single crystals
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| Creator |
Talanin, V.I.
Talanin, I.E. Voronin, A.A. Sirota, A.V. |
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| Description |
The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversaturated solid-state solution follows two mechanisms, namely vacancy-type and interstitial-type. Decomposition of oversaturated solid impurity solutions occurs at temperatures near the crystallization front, while decomposition of oversaturated solid solutions of intrinsic point defects is induced by crystal cooling (at T < 1200°C). The good consistency between theoretical and experimental results proves the validity of the proposed model for point defects aggregation.
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| Date |
2018-06-16T12:18:04Z
2018-06-16T12:18:04Z 2007 |
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| Type |
Article
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| Identifier |
The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136429 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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