Dominant point defects in doped cadmium telluride CdTe:Ge
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dominant point defects in doped cadmium telluride CdTe:Ge
|
|
| Creator |
Freik, D.M.
Pysklynets, U.M. Mezhylovska, L.Y. |
|
| Description |
Quasi-chemical equations have been proposed for the formation of point defects (PD) and complexes thereof in germanium-doped cadmium telluride single crystals. Baric and temperature dependences of dominant PD and free charge carriers concentrations in CdTe:Ge have been obtained. Equilibrium constants for quasi-chemical equations of complex (GeCd⁺VCd²⁻)⁻ formation have been determined as well as those for germanium transition from cation to anion sublattice of the main matrix. Results of the investigation have been explained by restricted solubility of the dopant under high temperature equilibrium of the PD. Dependence of germanium solubility in CdTe upon temperature and partial pressure of cadmium vapor have been calculated theoretically.
|
|
| Date |
2018-06-16T13:02:33Z
2018-06-16T13:02:33Z 2007 |
|
| Type |
Article
|
|
| Identifier |
Dominant point defects in doped cadmium telluride CdTe:Ge / D.M. Freik, U.M. Pysklynets, L.Y. Mezhylovska // Functional Materials. — 2007. — Т. 14, № 2. — С. 181-186. — Бібліогр.: 12 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136487 |
|
| Language |
en
|
|
| Relation |
Functional Materials
|
|
| Publisher |
НТК «Інститут монокристалів» НАН України
|
|