Radiation-induced processes and defects in purified CsI crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Radiation-induced processes and defects in purified CsI crystals
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| Creator |
Garapyn, I.
Pavlyk, B. Tsybulyak, B. |
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| Description |
Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defects have been found to run in different manners depending on the γ-irradiation dose. Starting from a dose of 10⁵ Gy, the γ-irradiation affects appreciably the defect structure of the purified cesium iodide crystals.
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| Date |
2018-06-16T13:20:14Z
2018-06-16T13:20:14Z 2007 |
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| Type |
Article
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| Identifier |
Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136529 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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