Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
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| Creator |
Kushnir, B.V.
Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. |
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| Subject |
Characterization and properties
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| Description |
A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established.
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| Date |
2018-06-16T16:14:27Z
2018-06-16T16:14:27Z 2017 |
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| Type |
Article
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| Identifier |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ.
1027-5495 DOI: https://doi.org/10.15407/fm24.03.372 http://dspace.nbuv.gov.ua/handle/123456789/136789 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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