Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg
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| Creator |
Gryvul, V.I.
Makhniy, V.P. Tkachenko, I.V. |
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| Description |
Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to data obtained fron thermo-e.m.f., conductivity and luminescence spectra measurements.
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| Date |
2018-06-16T18:24:12Z
2018-06-16T18:24:12Z 2007 |
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| Type |
Article
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| Identifier |
Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg / V.I. Gryvul, V.P. Makhniy, I.V. Tkachenko // Functional Materials. — 2007. — Т. 14, № 3. — С. 374-377. — Бібліогр.: 11 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136987 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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