Chemical polishing of InAs, InSb, GaAs and GaSb
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Chemical polishing of InAs, InSb, GaAs and GaSb
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| Creator |
Levchenko, I.V.
Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
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| Subject |
Technology
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| Description |
The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized.
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| Date |
2018-06-16T17:23:19Z
2018-06-16T17:23:19Z 2017 |
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| Type |
Article
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| Identifier |
Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ.
1027-5495 DOI: https://doi.org/10.15407/fm24.04.654 http://dspace.nbuv.gov.ua/handle/123456789/136890 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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