Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy
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| Creator |
Kulyk, S.P.
Melnichenko, M.M. Svezhentsova, K.V. Shmyryova, O.M. |
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| Subject |
Characterization and properties
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| Description |
The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). The surface morphology has been found to be characterized by the presence of a homogeneous nanostructure on the initial substrate microrelief. For the first time it has been shown that the spectrum of electron states changes considerably during the growth of a nanostructured silicon film.
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| Date |
2018-06-17T09:08:19Z
2018-06-17T09:08:19Z 2008 |
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| Type |
Article
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| Identifier |
Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy / S.P. Kulyk, M.M. Melnichenko, K.V. Svezhentsova, O.M. Shmyryova // Functional Materials. — 2008. — Т. 15, № 1. — С. 74-77. — Бібліогр.: 6 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/137225 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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