Variation of crystal lattice parameters of KDP single crystals containing impurities
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Variation of crystal lattice parameters of KDP single crystals containing impurities
|
|
| Creator |
Salo, V.I.
Tkachenko, V.F. |
|
| Subject |
Technology
|
|
| Description |
KDP single crystals grown from aqueous solutions by the recirculation method from nominally "pure" raw material and added impurities Ca, Si, Pb, Cr, hydrogen peroxide were studied by high resolution X-ray method. It was found that additional introduction of impurities leads to a deterioration of structural quality of crystals. The main growth defects of crystals at dislocation density ~ 10² cm⁻² at the absence of zonarity and sectoriality is the impurity striation and presence of low-angle quasi-boundaries. A correlation between the concentration of low-angle quasi-boundaries, dispersion of structure-sensitive parameters and the bulk laser damage resistance of crystals is observed.
|
|
| Date |
2018-06-17T09:17:30Z
2018-06-17T09:17:30Z 2008 |
|
| Type |
Article
|
|
| Identifier |
Variation of crystal lattice parameters of KDP single crystals containing impurities / V.I. Salo, V.F. Tkachenko // Functional Materials. — 2008. — Т. 15, № 1. — С. 149-152. — Бібліогр.: 5 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/137239 |
|
| Language |
en
|
|
| Relation |
Functional Materials
|
|
| Publisher |
НТК «Інститут монокристалів» НАН України
|
|