Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr
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| Creator |
Plecenik, A.
Gazi, S. Zuzcak, M. Benacka, S. Shaternik, V. Rudenko, E. |
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| Subject |
Низкоразмерные и неупорядоченные системы
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| Description |
A tunneling structures NbZr/NbOₓ/Al/AlOy/NbZr with a thin barrier in the NbZr/NbOₓ/Al junction and 4 to 6-nm-thick Al interlayer were prepared and studied experimentally. A proximity effect between NbZr and Al through NbOₓ barrier has been observed. An electrical voltage was generated in the NbOx barrier and a coexistence of the proximity effect and applied voltage in the junction NbZr/NbOₓ/Al has been observed. This experiment could be described on the basis of a model for coherent charge transport in superconducting/normal proximity structures.
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| Date |
2018-06-19T18:54:52Z
2018-06-19T18:54:52Z 1999 |
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| Type |
Article
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| Identifier |
Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr / A. Plecenik, S. Gazi, M. Zuzcak, S. Benacka, V. Shaternik, E. Rudenko // Физика низких температур. — 1999. — Т. 25, № 10. — С. 1082-1086. — Бібліогр.: 7 назв. — англ.
0132-6414 http://dspace.nbuv.gov.ua/handle/123456789/139060 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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