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Електронний архів Житомирського державного технологічного університету
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
?????????? ?????????? ??????????????? ????????????? ?????????? ???????-????????? ??????
Research electrophysical characteristics of silicon impatt diodes |
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| Creator |
??????????, ?.?.
Slipokurov, V.S. |
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| Subject |
???????-????????? ????
?????-??????? ?????????????? Si SiC GaAs InP ???????????? ???????? ??????? ????????? IMPATT diode current-voltage characteristics Si SiC GaAs InP terahertz range diffusion generation |
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| Description |
??????????????? ??????????? ???????-????????? ?????? ??????????????????? ????????? ????? ?? ????? ??????????? ????????? ???????. ???????? ?????????? ?? ????????? ???????? ?????????? ?????????????????? ???????? ?? ?????? Si, SiC, GaAs, ??? ? ?????????? ???????, ??????? ? ??????? ?? ?????? InP. ???????? ???????? ???????? ?? ???????? ?????????? ?????????? ????????????? ???????-????????? ?????? ?? ????, ?? ?????? ?? ???????? ? ???????? ??????? ?? ???????????? ? ???????????. ???? ?????????? ???????????? ? ?????? ????????? ?????????? ?????????????????? ????????, ??????? ? ??????? ?? ?????? ?????????? ????? ?3?5. ??????????? ??????????? ?????? ??????????? ?????? ?? ????????? ????? ?????-???????? ?????????????? (???). ????????? ????????? ???????????????? ????? p-n-??????? ??????????? ???????-?????????? ????? ?? ?????? ???. Systematized design IMPATT diode microwave wavelength range by type modifications span region. Show results as obtained output parameters of semiconductor devices based on Si, SiC, GaAs and theoretically possible including diodes based on InP. These values indicate a preference to silicon technology design IMPATT diodes as such, which as of today is the most studied and implemented in production. These results are compared with other output value of semiconductor devices, including diodes on the basis of group A3B5. Study is done by measuring the direct and reverse branches of the current-voltage characteristics. The mechanism of current through pn-junction silicon IMPATT diode for direct current-voltage characteristics. |
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| Date |
2016-03-31T10:55:04Z
2016-03-31T10:55:04Z 2014 |
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| Type |
Article
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| Identifier |
http://eztuir.ztu.edu.ua/123456789/2452
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| Language |
uk
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| Relation |
?????? ????: ?????: ???????? ?????;1(68)
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| Publisher |
????
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