Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
Цифровой репозитарии Национального технического университета "Харьковский политехнический институт" (eNTUKhPIIR)
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
Залежність електропровідності від товщини тонких плівок Bi₂Se₃ |
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| Creator |
Menshikova, S. I.
Rogacheva, E. I. Sipatov, A. Yu. Fedorov, A. G. |
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| Description |
Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data.
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| Date |
2019-01-25T14:59:57Z
2019-01-25T14:59:57Z 2017 |
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| Type |
Article
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| Identifier |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S. I. Menshikova [et al.] // Functional Materials. – 2017. – Vol. 24, No 4. – P. 555-558.
http://repository.kpi.kharkov.ua/handle/KhPI-Press/39353 |
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| Language |
en
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| Format |
application/pdf
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| Publisher |
Institute for Single Crystals
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