Dependences of thermoelectric properties on the thickness of thin films of indium doped lead telluride
Цифровой репозитарии Национального технического университета "Харьковский политехнический институт" (eNTUKhPIIR)
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dependences of thermoelectric properties on the thickness of thin films of indium doped lead telluride
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| Creator |
Menshikova, S. I.
Rogacheva, E. I. Sipatov, A. Yu. Matychenko, P. V. Dobrotvorskaya, M. V. |
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| Subject |
lead telluride
thin film thickness size effect |
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| Description |
Dependences of thermoelectric properties (the Seebeck coefficient S, the electric conductivity σ, the Hall coefficient RH, the carrier mobilityμ and the thermoelectric power P = S²·σ) on the thickness d (d = 10 – 255 nm) of thin films prepared by vacuum evaporation of indiumdoped PbTe crystals and subsequent condensation on (111) BaF₂ substrates were obtained. With decreasing thickness of films to d ≈ 40 nm, there is n- to p-type inversion of conduction which is related to a change in thermodynamic equilibrium conditions and partial reevaporation of lead and/or indium atoms. Extremes were found on the thickness dependences of properties at d₁ ≈ 20 nm which is indicative of hole gas quantization. In the range of thicknesses with n-type conduction there is a smooth change in thermoelectric properties with thickness which testifies to manifestation of classical size effect and is sufficiently well described in the framework of the Fuchs-Sondheimer theory.
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| Date |
2019-01-30T11:33:04Z
2019-01-30T11:33:04Z 2014 |
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| Type |
Article
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| Identifier |
Dependences of thermoelectric properties on the thickness of thin films of indium doped lead telluride / S. I. Menshikova [et al.] // Journal of Thermoelectricity. – 2014. – No 6. – P. 52-61.
http://repository.kpi.kharkov.ua/handle/KhPI-Press/39435 |
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| Language |
en
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| Format |
application/pdf
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| Publisher |
Institute of Thermoelectricity
Academy of Sciences and Ministry of Education and Science of Ukraine |
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