Degradations of semicondactor devices under pulsed heat overloading
Електронного архіву Харківського національного університету радіоелектроніки (Open Access Repository of KHNURE)
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Degradations of semicondactor devices under pulsed heat overloading
Degradations of semicondactor devices under pulsed heat overloading |
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| Creator |
Chumakov, V. I.
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| Subject |
DEGRADATIONS, SEMICONDUCTOR DEVICES, PULSED HEAT OVERLOADING
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| Description |
References: 1. Wunsch D.S., Bell R.R. IEEE Trans. on Nuclear. Sci. 1968.NS.15, No.6. P.244-259. 2. Dwyer V.M., Franklin A.J., Campbell D.S. IEEE Trans. on Electron Dev. 1990, ED.37 N î .11, pp.2381-2387. 3. Simulation of radioelectronic devices thermal failures / V.I. Chumakov // Radioelektronika i informatika ,1992, N 2, p.31-37. 4. Virchenko Yu.P., Vodyanitskii À.A., Kovtun G.P. Preprint, Kharkov: KhIFT, 1992, 32 p. (in Russian). 5. Galaktionov V.À., Kurdyumov S.P., Posashkov S.À Samarskii A..À. In : Mathematic modeling. Processes in nonlinear medium. Moskow: Nauka, 1986, p.142-182 (in Russian). 6. Blakemore J. Solid state physics. Moskov: Mir. 1988. (in Russian). 7. Carroll J. Microwave generator on hot electrons. Moskow: Mir, 1972. The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal depende ncies of the temperature under different forms of pulse of current are obtained |
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| Date |
2018-01-25T14:22:12Z
2018-01-25T14:22:12Z 2000 |
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| Type |
Article
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| Identifier |
http://openarchive.nure.ua/handle/document/4229
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| Relation |
Problems of Atomic Science and Technology. 2000. N 3. Series: Plasma Physics (5). p. 96 - 98;
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