Simulation of the thermal mechanizm in semiconductors under action of pulsed electromagnetic field
Електронного архіву Харківського національного університету радіоелектроніки (Open Access Repository of KHNURE)
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Simulation of the thermal mechanizm in semiconductors under action of pulsed electromagnetic field
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| Creator |
Chumakov, V. I.
Slipchenko, N. I. Stolarhuk, A. V. Egorov, A. M. Lonin, Yu. F. |
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| Subject |
THERMAL MECHANISM, SEMICONDUCTORS, PULSED ELECTROMAGNETIC FIELD
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| Description |
REFERENCES 1. D.M.Tasca Pulse power failure modes in semiconductors // JEEE Trans. on Nuclear Sci. 1970, v.NS-17, p.364-372. 2. D.S.Wunsch, R.R.Bell. Determination of threshold failure level of semiconductor diodes and transistors due to pulse voltage // IEEE Trans. on Nuclear Sci. 1968, v.NS-15, N 6, p.244-259. 3. V.I.Chumakov Methods of modeling the thermal failures in semiconductor devices // Radio electronics and informatic. 1999, No.2, p.31-37. 4. Microwave devices with semiconductor diodes.Designing and calculation. Edited by I.V.Malsky and B.V.Sestroretsky, Sovetskoye radio, 1969, p.5 80 (in Russian). 5. R.J. Antinone. How to prevent circuit zapping // IEEE Spectrum. 1987, v.4, N 24, p.34-38. 6. L.O.Myrova, A.Z.Chepyzhenko Maintenance of the communication equipment stability under action of ionizing and electromagnetic radiations.-M-Radio i Svyaz’, 1988, p.296 (in Russian). 7. S.B.Bludov, N.P.Gadetsky, V.I.Chumakov et al.Generation of high-power rf pulses of ultrashort duration and their action on the articles of electronics engineering // Plasma physic. 1994, v.20, No7,8, p.712-717. 8. D.E.Abdurakhimov, P.N.Bochikashvili, V.L.Vereshchagin et al. Action of electromagnetic rf pulses on the structure of impurity heterogeneity in silicon crystals and characteristics of semiconductor devices // Microelectronics.1992, v.21, No 21, p.82-89. The paper presents a model taking into account the time character of heat localization and distribution in semiconductor devices unlike the classical Wunsch-Bell linear model describing the thermal mechanism of EM-radiation action on REA. The classification of action levels is given. The nonlinear model permitting to determine the time boundary of heat propagation in the semiconductor device is presented. In the time range t>tcr a uniform volumetric heating of the object takes place, and for t there is a heat localization in the range of energy release due to the lag of the heat dissipation process behind the energy input process. Taking this into account one determines the energy leading to irreversible results of action. The model allows one to determine the feeblest aspects of REA. |
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| Date |
2018-01-25T14:39:35Z
2018-01-25T14:39:35Z 2004 |
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| Type |
Article
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| Identifier |
http://openarchive.nure.ua/handle/document/4230
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| Language |
en
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| Relation |
PROBLEMS OF ATOMIC SIENCE AND TECHNOLOGY. 2004. No 2. Series: Nuclear Phys ics Investigations (43), p.203- 205.;
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