Investigation of Photoelectric Converters Based on Different Semiconductor Materials
Електронного архіву Харківського національного університету радіоелектроніки (Open Access Repository of KHNURE)
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigation of Photoelectric Converters Based on Different Semiconductor Materials
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| Creator |
Натарова, Ю. В.
Галат, А. Б. Гнатенко, А. С. |
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| Subject |
Energy
Absorption spectrum Photoconverter Semiconductor |
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| Description |
work is to study the absorbing power of various materials used in the production of solar cells and to determine the materials for manufacturing batteries with the highest efficiency. Calculations and techniques presented in this paper make it possible to compare the absorption efficiency of the spectrum of 0.3-1.4 m for multilayer thin-film structures. As a result of calculations and modeling, the dependence of the absorbing capacity of the heterostructure on the thickness of the active and buffer layers was obtained. For research work we selected the most promising solar cells that use heterojunctions based on crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si: H), cadmium telluride (CdTe), diselenide indium (CuInSe2–CIS), diselenide gallium (CuInSe2–CIS), and also solid solutions of CuIn1 – хGaxSe2–CIGS. |
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| Date |
2018-08-27T18:54:12Z
2018-08-27T18:54:12Z 2018 |
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| Type |
Article
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| Identifier |
Natarova Yu.V. Investigation of Photoelectric Converters Based on Different Semiconductor Materials / A.B. Galat, A.S. Gnatenko // J. Nano- Electron. Phys. 10 No 4, 04023 (2018). DOI: 10.21272/jnep.10(4).04023
http://openarchive.nure.ua/handle/document/6805 |
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| Language |
ru
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| Publisher |
СумДУ
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