Local MW Heating-Up Kinetics in Semiconductors and Dielectrics
Електронного архіву Харківського національного університету радіоелектроніки (Open Access Repository of KHNURE)
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Title |
Local MW Heating-Up Kinetics in Semiconductors and Dielectrics
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Creator |
Gordienko, Yu. Ye.
Larkin, S. Yu. Slipchenko, N. I. Shcherbak, Ye. L. |
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Subject |
heating rate
temperature holding pulse power supply coaxial probe micromodifier locality |
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Description |
A rigorous numerical simulation was used to ascertain the quantitative characteristic properties of highly local heating kinetics in semiconductuctors and dielectrics by means of near-field coaxial probes. The heating-up rate and locality are shown to be drastically increased, as the cross-section of the point in these types of probes decreases to the range of values in units of microns. This effect appears to be particularly more pronounced when the probe point is of spherical shape. The attained temperature holding locality is associated with the heat conduction of an objects material and tends to be impaired in comparison with the crossection of the probe point when the excitation pulse duration gets longer. As far as the micron sections of the point is concerned, the typical duration of the excitation pulse does not exceed ten fractions of a microsecond. The authors of the present paper suggest that the problem of holding a present temperature and minimizing the locality loss be partially resolved through the use of the sophisticated pulse power supply system in the MW micromodifier in question. |
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Date |
2019-02-28T12:12:05Z
2019-02-28T12:12:05Z 2015 |
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Type |
Article
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Identifier |
Gordienko Yu. Ye. Local MW Heating-Up Kinetics in Semiconductors and Dielectrics / Gordienko Yu. Ye., Slipchenko N.I., Larkin S. Yu., Shcherbak Ye. L. // Telecommunication and Radio Engineering, Vol. 74 (9) 2015 P.787-795.
http://openarchive.nure.ua/handle/document/7953 |
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Language |
en
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Relation |
Volume 74;№9
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Publisher |
Telecommunications and Radio Engineering
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