High Second-Order Nonlinear Susceptibility Induced in GaN/AlxGa1 – xN Coupled Quantum Well for Infrared Photodectors Application
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
High Second-Order Nonlinear Susceptibility Induced in GaN/AlxGa1 – xN Coupled Quantum Well for Infrared Photodectors Application
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| Creator |
Elkadadra, A.
Abouelaoualim, D. Oueriagli, A. Outzourhit, A. |
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| Subject |
Second-harmonic generation
Wurtzite quantum well Strain-induced piezoelectric Density matrix approach Numerov method |
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| Description |
The second harmonic generation (SHG) of GaAs/AlxGa1 − xAs a wurtzite coupled quantum wells (CQWs) is studied theoretically for different widths of well, barrier and values Al concentration, taking into account the strain-induced piezoelectric (PZ) effects. The analytical expression of the SHG susceptibility is deduced by using the compact density matrix approach. The confined wave functions and energies of electrons GaN/AlxGA1 – x N are calculated in the effective-mass approximation, solving the Schrödinger equation by Numerov’s method using six order approximations for the derivatives. The calculated results also reveal that by adjusting the widths of well, the barrier and Al concentration respectively, a set of optimal structural parameters can be found for obtaining a strong SHG susceptibility. |
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| Publisher |
Сумський державний університет
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| Date |
2012-08-27T11:28:03Z
2012-08-27T11:28:03Z 2012 |
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| Type |
Article
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| Identifier |
A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit, J. Nano-Electron. Phys. 4 No 2, 02002 (2012)
http://essuir.sumdu.edu.ua/handle/123456789/27772 |
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| Language |
en
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