Effect of Impurity Concentration on the Depth Profile of the Electric Field within Monolayer Thin Film
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of Impurity Concentration on the Depth Profile of the Electric Field within Monolayer Thin Film
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| Creator |
Habubi, N.F.
Mishjil, Kh.A. Rashid, H.G. |
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| Subject |
Electric field intensity
Matrix formulas Contamination sensitivity |
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| Description |
The effect of impurity concentration ratios on the depth profile of electric field within monolayer film is presented. SnO2 monolayer thin film material was prepared and doped with Co using spray chemical pyrolysis. The concentration ratios of impurity were 1 %, 3 %, 5 % and 7 %. The analysis utilizes matrix formulas based on Abele's formulas from the calculation of reflectance and transmittance. Present study gives an information to contamination sensitivity in optical coating issue.
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| Publisher |
Сумський державний університет
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| Date |
2012-08-28T09:05:19Z
2012-08-28T09:05:19Z 2012 |
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| Type |
Article
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| Identifier |
N.F. Habubi, Kh.A. Mishjil, H.G. Rashid, J. Nano-Electron. Phys. 4 No 2, 24 (2012)
http://essuir.sumdu.edu.ua/handle/123456789/27797 |
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| Language |
en
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