A two-dimensional (2D) potential distribution model for the short gate-length ion-implanted GaAs mesfets under dark and illuminated conditions
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
A two-dimensional (2D) potential distribution model for the short gate-length ion-implanted GaAs mesfets under dark and illuminated conditions
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| Creator |
Tripathi, Shweta
Jit, S. |
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| Subject |
short channel GaAs mesfet
ion-implantation ионная имплантация іонна імплантація оптические смещения оптичні зміщення optical biasing Poisson’s equation photovoltage |
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| Description |
An analytical 2D model to predict the potential distribution of short-channel ionimplanted GaAs MESFETs has been presented. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson’s equation in conjunction with suitable boundary conditions using superposition method. The remarkable feature of the proposed model is that the implanted doping profile has been treated in completely analytical manner. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson’s equation to study the optical effects on the device. The photovoltage developed across the gate metal has also been modeled. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available ATLASTM2D device simulator. |
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-03T08:33:32Z
2012-09-03T08:33:32Z 2011 |
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| Type |
Article
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| Identifier |
Tripathi, Shweta A two-dimensional (2D) potential distribution model for the short gate-length ion-implanted GaAs mesfets under dark and illuminated conditions [Текст] / S. Tripathi, S. Jit // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 868-877.
http://essuir.sumdu.edu.ua/handle/123456789/27858 |
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| Language |
en
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