Germanium nanocrystals embedded in silicon dioxide for floating gate memory devices
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Germanium nanocrystals embedded in silicon dioxide for floating gate memory devices
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| Creator |
Bag, A.
Aluguri, R. Ray, S.K. |
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| Subject |
germanium nanocrystals
floating gate memory metal oxide-semiconductor photoluminescence spectroscopy flat band voltage |
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| Description |
Metal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge) nanocrystals (NCs) and silicon dioxide (SiO2) layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates. Plane view transmission electron micrographs revealed the formation of spherically shaped and uniformly distributed Ge NCs. The optical and electronic characteristics of tri-layer structures were studied through photoluminescence (PL) spectroscopy and capacitance-voltage (C-V) measurements, respectively. Frequency dependent electrical properties of the structures have been studied. The optical emission characteristics support the confinement of the carriers in Ge NCs embedded in oxide matrices. An anticlockwise hysteresis in C-V characteristics suggests electron injection and trapping in Ge NCs. |
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-03T09:04:03Z
2012-09-03T09:04:03Z 2011 |
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| Type |
Article
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| Identifier |
Bag, A. Germanium nanocrystals embedded in silicon dioxide for floating gate memory devices [Текст] / A. Bag, R. Aluguri, S.K. Ray // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 873-883.
http://essuir.sumdu.edu.ua/handle/123456789/27859 |
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| Language |
en
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