Manufacturing practices for silicon-based power diode in fast recovery applications
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Manufacturing practices for silicon-based power diode in fast recovery applications
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| Creator |
Harihara, Krishnan N.
Anandarao, N. Kumar, Yadav V. Jayaraman, K.N. Sanjeev, Ganesh |
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| Subject |
semiconductor devices
fast recovery diodes electron irradiation gold diffusion reverse recovery characteristics |
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| Description |
This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ) silicon wafer as the starting raw material. Alternate processes viz. gold diffusion, gamma irradiation and electron irradiation were explored for control of carrier lifetime required to tune the switching response of the diode to the desired value of 8 s. The paper compares the results of these alternate processes. The diodes were fabricated and tested for forward conduction, reverse blocking and switching characteristics. The measured values were observed to be comparable with the design requirements. The paper presents an overview of the design, manufacturing nd testing practices adopted to meet the desired diode characteristics and ratings. |
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-06T08:46:06Z
2012-09-06T08:46:06Z 2011 |
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| Type |
Article
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| Identifier |
Manufacturing practices for silicon-based power diode in fast recovery applications [Текст] / Krishnan N. Harihara, N. Anandarao, Yadav V. Kumar et al. // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 914-920.
http://essuir.sumdu.edu.ua/handle/123456789/27883 |
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| Language |
en
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