Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN
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| Creator |
Nanda, Kumar Reddy N.
Rajagopal, Reddy V. |
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| Subject |
schottky barrier diode
thermal annealing temperature I-V and C-V characteristics leakage current barrier height |
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| Description |
We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Schottky barrier height of the as-deposited Pd/Ru contact is found to be 0.67 eV (I-V) and 0.79 eV (C-V), respectively. Measurements showed that the Schottky barrier height increased from 0.68 eV (I-V) and 0.80 eV (C-V) to 0.80 eV (I-V) and 0.96 eV (C-V) as the annealing temperature is varied from 200 °C to 300 °C. Upon annealing at 400 °C and 500 °C, the Schottky barrier height decreased to 0.73 eV (I-V) and 0.85 eV (C-V) and 0.72 eV (I-V) and 0.84 eV (C-V), respectively. It is noted that the barrier height further decreased to 0.59 eV (I-V) and 0.72 eV (C-V) when the contact is annealed at 600 °C. The change of Schottky barrier heights and ideality factors with annealing temperature may be due to the formation of interfacial compounds at the Ru/Pd/n-GaN interface.
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-06T10:56:18Z
2012-09-06T10:56:18Z 2011 |
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| Type |
Article
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| Identifier |
Nanda, Kumar Reddy N.
Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN [Текст] / Kumar Reddy N. Nanda, Reddy V. Rajagopal // Journal of Nano- and Electronic Physics. — 2011. — Vol. 3, № 1, Part V. - P. 921-925.
http://essuir.sumdu.edu.ua/handle/123456789/27884 |
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| Language |
en
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