Role of interface charges on high-k based poly-Si and aetal gate nano-scale MOSFETs
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Role of interface charges on high-k based poly-Si and aetal gate nano-scale MOSFETs
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| Creator |
Shashank, N.
Singh, V. Taube, W.R. Nahar, R.K. |
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| Subject |
MOSFET
Interface charges Metal gates |
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| Description |
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA). The impact of interface charges on the characteristics of Poly-Si and TiN metal gate MOSFETs are investigated. The simulation results shows that, at high interface charge densities, the devices with Poly-Si gate degrade much compared to metal gate MOSFET structures. Emphasis is given to study the mobility degradation which stands as a major hurdle with the implementation of high-k dielectrics in nano-scale devices. The advantages of using Watt model over other models for the extraction of channel mobility is also clearly explained. The performance of the high-k MOSFET with metal electrode and poly-silicon electrode is also compared for various interface state charges.
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-06T11:19:53Z
2012-09-06T11:19:53Z 2011 |
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| Type |
Article
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| Identifier |
N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar, J. Nano- Electron. Phys. 3 No1, 937 (2011)
http://essuir.sumdu.edu.ua/handle/123456789/27887 |
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| Language |
en
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