Designing single chamber hwcvd system for high deposition rate device quality A-Si:h thin films and solar cells
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Designing single chamber hwcvd system for high deposition rate device quality A-Si:h thin films and solar cells
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| Creator |
Wadibhasme, N.A.
Soni, S.K. Kumbhar, Alka |
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| Subject |
ydrogenated amorphous silicon
HWCVD FTIR Raman spectroscopy Dark and photoconductivity |
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| Description |
A new single chamber HWCVD with vertically mounted substrates and filaments has been designed for depositing device quality a-Si:H films with high deposition rate. Optimization studies on films deposited in this chamber under a variety of deposition conditions yielded uniform films at more than 7Å/sec deposition rate and with very low oxygen content. These films show a photoconductivity gain of more than 105. The working pressure has been kept quite low at 15 mtorr compared to earlier studies. i-layers of a p-i-n single junction solar cells were deposited on the TCO (Asahi-U type) glass in this reactor. The initial p-layer and the final n-layer were deposited in another system with separate chambers for these doped layers thus exposing the p-layer as well as the i-layer to the atmosphere during the transfer. Using this optimized intrinsic layer, a-Si:H based p-i-n solar cell showed a conversion efficiency of 4.7 %.
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-06T11:35:53Z
2012-09-06T11:35:53Z 2011 |
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| Type |
Article
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| Identifier |
N.A. Wadibhasme, S.K. Soni, Alka Kumbhar, et al., J. Nano- Electron. Phys. 3 No1, 942 (2011)
http://essuir.sumdu.edu.ua/handle/123456789/27890 |
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| Language |
en
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