High-k HfO2 based metal-oxide-semiconductor devices using silicon and silicon carbide semiconductor
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
High-k HfO2 based metal-oxide-semiconductor devices using silicon and silicon carbide semiconductor
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| Creator |
Maity, N.P.
Pandey, A. Chakraborty, S. Roy, M. |
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| Subject |
C-V characteristics
HfO2 MOS Silicon carbide Flatband capacitance |
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| Description |
In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices. We simulate the capacitance-voltage (C-V) characteristics of the MOS devices with ultrathin oxide using ATLAS, a commercially available TCAD tool from SILVACO. The tool has investigated the effect on C-V characteristics of different oxide thickness and doping concentration of SiO2 and HfO2 as insulators and Si and SiC as semiconductor based MOS devices. Excellent agreement was observed over a wide range of oxide thickness and substrate doping for the materials. The C-V characteristics of different polytype of SiC semiconductor also studied for n-type MOS devices.
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-06T11:42:33Z
2012-09-06T11:42:33Z 2011 |
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| Type |
Article
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| Identifier |
N.P. Maity, A. Pandey, S. Chakraborty, M. Roy, J. Nano- Electron. Phys. 3 No1, 947 (2011)
http://essuir.sumdu.edu.ua/handle/123456789/27891 |
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| Language |
en
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