Investigation of implantation-induced damage in indium phosphide for layer transfer applications
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigation of implantation-induced damage in indium phosphide for layer transfer applications
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| Creator |
Dadwal, U.
Pareek, V. Scholz, R. Reiche, M. Chandra, S. Singh, R. |
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| Subject |
ion implantation
damage TEM nanocracks nanobubbles |
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| Description |
100 keV H+ and He+ ion implantation was performed in 300 µm thick (100) InP substrates at liquid nitrogen temperature with a constant fluence of 1 × 1017 cm–2. The surface morphology of the as-implanted InP samples was studied by optical microscopy. The implantation-induced damage was investigated by cross-sectional TEM, which revealed the formation of damage band in both cases near to the projected range of implanted ions. The formation of hydrogen-induced nanocracks and helium filled nanobubbles was observed in as-implanted InP samples.
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| Publisher |
Видавництво СумДУ
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| Date |
2012-09-07T06:44:03Z
2012-09-07T06:44:03Z 2011 |
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| Type |
Article
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| Identifier |
U. Dadwal, V. Pareek, R. Scholz, et al., J. Nano- Electron. Phys. 3 No1, 1081 (2011)
http://essuir.sumdu.edu.ua/handle/123456789/27924 |
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| Language |
en
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