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New evolving directions for device performance optimization based integration of compound semiconductor devices on silicon

Electronic Archive of Sumy State University

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Title New evolving directions for device performance optimization based integration of compound semiconductor devices on silicon
 
Creator Mukhopadhyay, Partha
Das, Palash
Chang, Edward Y.
Biswas, Dhrubes
 
Subject metamorphic buffer
compound semiconductor
integration
III-V/Si
strain
dislocation density
lattice mismatch
 
Description Rapid advances in Compound Semiconductor (CS) technologies over last several decades have lead to high performances in peak power, power added efficiency (PAE) and linearity, but these devices are not amenable for integration on mainstream silicon technologies. A strategic direction has been presented for the growth of CS devices on silicon with challenges abounding in scalability, compatibility and cost effectiveness while extracting optimized device performances. The approach at IIT Kharagpur has been simulation and experimental development of customized metamorphic buffers that are scalable and compatible to silicon without sacrificing any CS performances, primarily for electronic applications. This has evolved into a new strategic paradigm for performance optimization of seemingly competing and disparate properties which otherwise will not be supported by conventional process technologies. Simulation of these next generation structures reveals assimilation of superior device properties, with a novel five Indium content composite channel MHEMT indicating improvements over existing composite channel MHEMT in terms of linearity and higher current performances.
 
Publisher Видавництво СумДУ
 
Date 2012-09-07T08:16:33Z
2012-09-07T08:16:33Z
2011
 
Type Article
 
Identifier Partha Mukhopadhyay, Palash Das, Edward Y. Chang, Dhrubes Biswas, J. Nano- Electron. Phys. 3 No1, 1102 (2011)
http://essuir.sumdu.edu.ua/handle/123456789/27935
 
Language en