Запис Детальніше

Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal

Vernadsky National Library of Ukraine

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Поле Співвідношення
 
Title Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal
 
Creator Yakovlev, V.
Trefilova, L.
Alekseev, V.
Karnaukhova, A.
Shpylynska, O.
Lebedynskiy, A.
Tarakhno, O.
 
Subject Characterization and properties
 
Description Luminescence properties of Tl⁰va⁺ and Tl⁺vc⁻ color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl⁰va⁺ and hole Tl⁺vc⁻ color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl⁺ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl⁺ to Tl⁰va⁺ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl⁺ to Tl⁺vc⁻ centers results in long-wave spectral shift and the duration increase of the scintillation pulse.
 
Date 2019-06-15T06:49:00Z
2019-06-15T06:49:00Z
2018
 
Type Article
 
Identifier Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal / V. Yakovlev, L. Trefilova, V. Alekseev, A. Karnaukhova, O. Shpylynska, A. Lebedynskiy, O. Tarakhno // Functional Materials. — 2018. — Т. 25, № 1. — С. 13-20. — Бібліогр.: 19 назв. — англ.
1027-5495
DOI: https://doi.org/10.15407/fm25.01.013
http://dspace.nbuv.gov.ua/handle/123456789/154076
 
Language en
 
Relation Functional Materials
 
Publisher НТК «Інститут монокристалів» НАН України