Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films
eKhNUIR
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films
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| Creator |
Gladkikh, N.T.
Grebennik, I.P. Dukarov, S.V. |
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| Subject |
Thin films
gallium arsenide crystal structure Research Subject Categories::NATURAL SCIENCES::Physics::Condensed matter physics::Surfaces and interfaces |
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| Description |
The results of an electronographic investigation of the Ni—GaAs double-layer films phase composition depending on temperature at condensation of Ni at GaAs are presented. The structure and number of the phases being formed have been shown to depend both on ther-mal conditions at interaction of the Ni and GaAs layers and on the Ni to GaAs layer mass ratio: mNi//mGaAs = (0.5; 1.2).
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| Date |
2015-12-12T19:32:24Z
2015-12-12T19:32:24Z 1998 |
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| Type |
Article
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| Identifier |
Gladkikh N.T., Grebennik I.P., Dukarov S.V. Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films // Met. Phys. Adv. Tech. – 1998. – V. 17. – P. 725–734.
http://dspace.univer.kharkov.ua/handle/123456789/11055 |
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| Language |
en
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